Patterning Polymer Layer to Reduce Stress

ABSTRACT

A method of forming a semiconductor device includes forming a plurality of metal pads over a semiconductor substrate of a wafer, forming a passivation layer covering the plurality of metal pads, patterning the passivation layer to reveal the plurality of metal pads, forming a first polymer layer over the passivation layer, forming a plurality of redistribution lines extending into the first polymer layer and the passivation layer to connect to the plurality of metal pads, forming a second polymer layer over the first polymer layer, and patterning the second polymer layer to reveal the plurality of redistribution lines. The first polymer layer is further revealed through openings in remaining portions of the second polymer layer.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of U.S. patent application Ser. No.16/176,078, entitled “Patterning Polymer Layer to Reduce Stress,” filedon Oct. 31, 2018, which application is incorporated herein by reference.

BACKGROUND

In the formation of integrated circuits, devices such as transistors areformed at the surface of a semiconductor substrate in a wafer. Aninterconnect structure is then formed over the integrated circuitdevices. A metal pad is formed over, and is electrically coupled to, theinterconnect structure. A passivation layer and a first polymer layerare formed over the metal pad, with the metal pad exposed through theopenings in the passivation layer and the first polymer layer.

A redistribution line is then formed to connect to the top surface ofthe metal pad, followed by the formation of a second polymer layer overthe redistribution line. An Under-Bump-Metallurgy (UBM) is formedextending into an opening in the second polymer layer, wherein the UBMis electrically connected to the redistribution line. A solder ball isthen placed over the UBM and reflowed.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1-3, 4A, 4B, 5, 6A, 6B, 6C and 7-9 illustrate the cross-sectionalviews of intermediate stages in the formation of a package in accordancewith some embodiments.

FIGS. 10 through 13 illustrate the top views of openings in top polymerlayers in accordance with some embodiments.

FIG. 14 illustrates a cross-sectional view of a part of a package inaccordance with some embodiments.

FIGS. 15 through 23 illustrate the cross-sectional views of intermediatestages in the formation of a package including an encapsulated devicedie and through-vias in accordance with some embodiments.

FIG. 24 illustrates a process flow for forming a package in accordancewith some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “underlying,” “below,”“lower,” “overlying,” “upper” and the like, may be used herein for easeof description to describe one element or feature's relationship toanother element(s) or feature(s) as illustrated in the figures. Thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

A package and the method of forming the same are provided in accordancewith some embodiments. The intermediate stages in the formation of thepackage are illustrated in accordance with some embodiments. Somevariations of some embodiments are discussed. Throughout the variousviews and illustrative embodiments, like reference numbers are used todesignate like elements. In accordance with some embodiments of thepresent disclosure, the top polymer layer in a package or a device dieis patterned in order to reduce the stress applied by the top polymerlayer to underlying layers, so that the reliability of the package isimproved.

FIGS. 1-3, 4A, 4B, 5, 6A, 6B, 6C and 7-9 illustrate the cross-sectionalviews and top views of intermediate stages in the formation of a packagein accordance with some embodiments of the present disclosure. Thecorresponding processes are also reflected schematically in the processflow 200 as shown in FIG. 24.

FIG. 1 illustrates a cross-sectional view of package component 20. Inaccordance with some embodiments of the present disclosure, packagecomponent 20 is a device wafer including active devices and possiblypassive devices, which are represented as integrated circuit devices 26.Device wafer 20 may include a plurality of chips 22 therein, with one ofchips 22 illustrated. In accordance with alternative embodiments of thepresent disclosure, package component 20 is an interposer wafer, whichmay or may not include active devices and/or passive devices. Inaccordance with yet alternative embodiments of the present disclosure,package component 20 is a package substrate strip, which includescore-less package substrates or the package substrates with corestherein. In subsequent discussion, a device wafer is discussed as anexample of package component 20. The embodiments of the presentdisclosure may also be applied on interposer wafers, package substrates,packages, etc.

In accordance with some embodiments of the present disclosure, wafer 20includes semiconductor substrate 24 and the features formed at a topsurface of semiconductor substrate 24. Semiconductor substrate 24 may beformed of crystalline silicon, crystalline germanium, silicon germanium,or a III-V compound semiconductor such as GaAsP, AlInAs, AlGaAs, GaInAs,GaInP, GaInAsP, or the like. Semiconductor substrate 24 may also be abulk semiconductor substrate or a Semiconductor-On-Insulator (SOI)substrate. Shallow Trench Isolation (STI) regions (not shown) may beformed in semiconductor substrate 24 to isolate the active regions insemiconductor substrate 24. Although not shown, through-vias may beformed to extend into semiconductor substrate 24, wherein thethrough-vias are used to electrically inter-couple the features onopposite sides of wafer 20.

In accordance with some embodiments of the present disclosure, wafer 20includes integrated circuit devices 26, which are formed on the topsurface of semiconductor substrate 24. Integrated circuit devices 26 mayinclude Complementary Metal-Oxide Semiconductor (CMOS) transistors,resistors, capacitors, diodes, and the like in accordance with someembodiments. The details of integrated circuit devices 26 are notillustrated herein. In accordance with alternative embodiments, wafer 20is used for forming interposers, and substrate 24 may be a semiconductorsubstrate or a dielectric substrate.

Inter-Layer Dielectric (ILD) 28 is formed over semiconductor substrate24 and fills the space between the gate stacks of transistors (notshown) in integrated circuit devices 26. In accordance with someembodiments, ILD 28 is formed of Phospho Silicate Glass (PSG), BoroSilicate Glass (BSG), Boron-doped Phospho Silicate Glass (BPSG),Fluorine-doped Silicate Glass (FSG), Tetra Ethyl Ortho Silicate (TEOS),or the like. ILD 28 may be formed using spin coating, Flowable ChemicalVapor Deposition (FCVD), or the like. In accordance with someembodiments of the present disclosure, ILD 28 is formed using adeposition method such as Plasma Enhanced Chemical Vapor Deposition(PECVD), Low Pressure Chemical Vapor Deposition (LPCVD), or the like.

Contact plugs 30 are formed in ILD 28, and are used to electricallyconnect integrated circuit devices 26 to overlying metal lines and vias.In accordance with some embodiments of the present disclosure, contactplugs 30 are formed of a conductive material selected from tungsten,aluminum, copper, titanium, tantalum, titanium nitride, tantalumnitride, alloys therefore, and/or multi-layers thereof. The formation ofcontact plugs 30 may include forming contact openings in ILD 28, fillinga conductive material(s) into the contact openings, and performing aplanarization (such as a Chemical Mechanical Polish (CMP) process or amechanical grinding process) to level the top surfaces of contact plugs30 with the top surface of ILD 28.

Over ILD and contact plugs 30 is interconnect structure 32. Interconnectstructure 32 includes metal lines 34 and vias 36, which are formed indielectric layers 38 (also referred to as Inter-metal Dielectrics(IMDs)). The metal lines at a same level are collectively referred to asa metal layer hereinafter. In accordance with some embodiments of thepresent disclosure, interconnect structure 32 includes a plurality ofmetal layers including metal lines 34 that are interconnected throughvias 36. Metal lines 34 and vias 36 may be formed of copper or copperalloys, and they can also be formed of other metals. In accordance withsome embodiments of the present disclosure, dielectric layers 38 areformed of low-k dielectric materials. The dielectric constants (kvalues) of the low-k dielectric materials may be lower than about 3.0,for example. Dielectric layers 38 may comprise a carbon-containing low-kdielectric material, Hydrogen SilsesQuioxane (HSQ), MethylSilsesQuioxane(MSQ), or the like. In accordance with some embodiments of the presentdisclosure, the formation of dielectric layers 38 includes depositing aporogen-containing dielectric material and then performing a curingprocess to drive out the porogen, and hence the remaining dielectriclayers 38 are porous.

Metal lines 34 and vias 36 are formed in dielectric layers 38. Theformation process may include single damascene and/or dual damasceneprocesses. In a single damascene process, a trench is first formed inone of dielectric layers 38, followed by filling the trench with aconductive material. A planarization such as a Chemical MechanicalPolish (CMP) process is then performed to remove the excess portions ofthe conductive material higher than the top surface of the IMD layer,leaving a metal line in the trench. In a dual damascene process, both atrench and a via opening are formed in an IMD layer, with the viaopening underlying and connected to the trench. The conductive materialis then filled into the trench and the via opening to form a metal lineand a via, respectively. The conductive material may include a diffusionbarrier layer and a copper-containing metallic material over thediffusion barrier layer. The diffusion barrier layer may includetitanium, titanium nitride, tantalum, tantalum nitride, or the like.

Metal lines 34 include top conductive (metal) features such as metallines, metal pads, or vias (denoted as 34A) in a top dielectric layer,which is in one of dielectric layers 38 (marked as dielectric layer38A). In accordance with some embodiments, dielectric layer 38A isformed of a low-k dielectric material similar to the material of lowerones of dielectric layers 38. In accordance with other embodiments,dielectric layer 38A is formed of a non-low-k dielectric material, whichmay include silicon nitride, Undoped Silicate Glass (USG), siliconoxide, or the like. Dielectric layer 38A may also have a multi-layerstructure including, for example, two USG layers and a silicon nitridelayer in between. Top metal features 34A may also be formed of copper ora copper alloy, and may have a dual damascene structure or a singledamascene structure. Dielectric layer 38A is sometimes referred to as apassivation layer.

Metal pads 42 are formed over and contacting metal features 34A. Therespective process is shown as process 202 in the process flow shown inFIG. 24. The illustrated metal pad 42 represents a plurality of metalpads at the same level. Metal pads 42 may be electrically coupled tointegrated circuit devices 26 through conductive features such as metallines 34 and vias 36 in accordance with some embodiments. Metal pads 42may be aluminum pads or aluminum-copper pads, and other metallicmaterials may be used. In accordance with some embodiments of thepresent disclosure, metal pads 42 have an aluminum percentage greaterthan about 95 percent.

A patterned passivation layer 44 is formed over interconnect structure32. The respective process is shown as process 204 in the process flowshown in FIG. 24. Some portions of passivation layer 44 may cover theedge portions of metal pads 42, and the central portions of the topsurfaces of metal pads 42 are exposed through openings 46 in passivationlayer 44. Passivation layer 44 may be a single layer or a compositelayer, and may be formed of a non-porous material. In accordance withsome embodiments of the present disclosure, passivation layer 44 is acomposite layer including a silicon oxide layer and a silicon nitridelayer over the silicon oxide layer.

FIG. 2 illustrates the formation of dielectric layer 48. In accordancewith some embodiments of the present disclosure, dielectric layer 48 isformed of a polymer such as polyimide, polybenzoxazole (PBO),benzocyclobutene (BCB), or the like. In accordance with some embodimentsof the present disclosure, dielectric layer 48 is formed of an inorganicdielectric material such as silicon oxide, silicon nitride, siliconoxynitride, or the like. In subsequent discussion, dielectric layer 48is referred to as polymer layer 48, while it can be formed of othermaterials. The respective process is shown as process 206 in the processflow shown in FIG. 24. Polymer layer 48 is patterned, so that thecentral portions of metal pads 42 are exposed. Polymer layer 48 may beformed of a light-sensitive material such as a photo resist, which maybe a negative photo resist or a positive photo resist. The formation andthe patterning of polymer layer 48 may include spin-coating polymerlayer 48, pre-baking polymer layer 48, performing a light-exposureprocess and a development process on polymer layer 48, and performinganother baking process to cure polymer layer 48. In accordance with someembodiments in which polymer layer 48 is formed of PBO, the pre-bakingmay be performed at a temperature in the range between about 100 degreesand about 180 degrees. The pre-baking duration may be in the rangebetween about 15 minutes and about 45 minutes. The light exposure isperformed using a lithography mask (not shown) having transparentpatterns and opaque patterns, which define the patterns of openings 46.After the light exposure, the development process is performed to removesome portions of polymer layer 48, so that openings 46 are revealedexposing the underlying metal pads 42. In accordance with someembodiments, the openings 46 in polymer layer 48 are smaller than theopenings 46 (FIG. 1) in passivation layer 44. In accordance with someembodiments, after the development, polymer layer 48 covers the entireunderlying portion of wafer 20, except the portions wherein theunderlying metal pads (such as 42) are to be revealed.

After the development, another baking process, which is also a curingprocess, is performed to cure polymer layer 48. In accordance with someembodiments in which polymer layer 48 is formed of PBO, the bakingprocess may be performed at a temperature in the range between about 250degrees and about 350 degrees. The baking duration may be in the rangebetween about 60 minutes and about 120 minutes. Through thelight-exposure process and the curing process, the remaining portions ofpolymer layer 48 are cross-linked, and will not be patterned and removedby subsequent light-exposure and development processes.

FIG. 3 illustrates the formation of conductive traces 50. Conductivetraces 50 are also referred to as Redistribution Lines (RDLs) inaccordance with some embodiments. The respective process is shown asprocess 208 in the process flow shown in FIG. 24. In accordance withsome embodiments of the present disclosure, the formation of conductivetraces 50 includes depositing a blanket metal seed layer, which may be acopper layer, forming a patterned plating mask (not shown) on theblanket metal seed layer, plating conductive traces 50, removing thepatterned plating mask, and etching the portions of the blanket metalseed layer previously covered by the patterned plating mask. Theremaining portions 50′ of the metal seed layer and the plated material50″ in combination form conductive traces 50, which include via portionsextending into polymer layer 48 and trace portions over polymer layer48, as illustrated in FIG. 3.

FIG. 4A illustrates the formation of top polymer layer 52. Therespective process is shown as process 210 in the process flow shown inFIG. 24. The formation process may include spin-coating polymer layer52, and then performing a pre-baking process. In accordance with someembodiments of the present disclosure, polymer layer 52 is formed of alight-sensitive polymer such as polyimide, PBO, or the like. Polymerlayer 52 may be a negative photo resist or a positive resist.Furthermore, polymer layers 48 and 52 may both be negative photoresists, both be positive photo resists, or either one of polymer layers48 and 52 is positive, and the other is negative. Polymer layer 52 maybe formed of a same type of polymer (such as PBO or polyimide) as thatof polymer layer 48. Alternatively, polymer layer 52 is formed of adifferent type of polymer than the polymer of polymer layer 48. Inaccordance with some embodiments in which polymer layer 48 is formed ofPBO, the pre-baking may be performed at a temperature in the rangebetween about 100 degrees and about 180 degrees. The pre-baking durationmay be in the range between about 15 minutes and about 45 minutes.

FIG. 4B illustrates the top view of a portion of wafer 20 as shown inFIG. 4A, and some portions of RDLs 50 and polymer layer 52 in accordancewith some embodiments are illustrated. Since polymer layer 52 fullycovers RDLs 50, RDLs 50 are illustrated using dashed lines. RDLs 50 mayinclude (metal) pad portions 50A and trace portions 50B connected to padportions 50A. The via portions (FIG. 4A) of RDLs 50 may be formeddirectly under either pad portions 50A or trace portions 50B. The viaportions are not shown.

FIG. 5 illustrates the patterning of polymer layer 52 in accordance withsome embodiments. The respective process is shown as process 212 in theprocess flow shown in FIG. 24. The patterning may include performing alight-exposure process and a development process on polymer layer 52,and performing another baking process to cure polymer layer 52. Thelight-exposure is performed using a lithography mask (not shown) havingtransparent patterns and opaque patterns, so that the patterns ofopenings 56 and 58 are transferred into polymer layer 52 from thelithography mask. After the light-exposure, a development process isperformed, so that openings 56 are formed overlapping the underlyingRDLs 50, and openings 58 are formed to reveal polymer layer 48. In thedevelopment process, the exposed polymer layer 48 will not be removed(regardless of whether polymer layers 48 and 52 are formed of a sametype of material such as PBO or not) since all the remaining portions ofpolymer layer 48 have been cured, and have been cross-linked by thepreceding processes.

After the development process, another baking process, which is also acuring process, is performed to cure polymer layer 52. In accordancewith some embodiments in which polymer layer 52 is formed of PBO, thebaking process may be performed at a temperature in the range betweenabout 250 degrees and about 350 degrees. The baking duration may be inthe range between about 60 minutes and about 90 minutes. Since polymerlayer 48 and 52 are formed in different processes, regardless of whetherpolymer layers 48 and 52 are formed of different material or a samematerial, there may be a distinguishable interface therebetween. Forexample, when using Secondary Electron Microscopy (SEM) or TransmissionElectron Microscopy (TEM), the interface can be distinguished.

FIG. 6A illustrates the formation of Under-Bump Metallurgies (UBMs) 60.The respective process is shown as process 214 in the process flow shownin FIG. 24. In accordance with some embodiments of the presentdisclosure, the formation of UBMs 60 may include depositing a metal seedlayer, which may include a titanium layer and a copper layer over thetitanium layer, forming a patterned plating mask (not shown) on theblanket metal seed layer, plating a metallic material such as copperinto the openings in the patterned plating mask, removing the patternedplating mask, and etching the portions of the metal seed layerpreviously covered by the patterned plating mask.

FIG. 6B illustrates a top view of a portion of wafer 2. In accordancewith some embodiments of the present disclosure, the remaining portionsof polymer layer 52 (referred to as polymer islands 52 hereinafter) areformed as isolated islands separated from each other. Between theislands, polymer layer 48 is exposed. In accordance with someembodiments, the design of the pattern of polymer islands 52 includingdetermining the positions and sizes of all RDLs 50 on wafer 20 (and die22) to ensure that polymer islands 52 cover all of RDLs 50. Furthermore,since polymer islands 52 have the function of buffering the stressapplied by the overlying UBM 60, polymer islands 52 are enlargedlaterally from the edges of RDLs 50, so that each of polymer islands 52has an extension portion extending beyond the corresponding edges of theunderlying RDLs 50, as illustrated in both FIGS. 6A and 6B. Theextension portions are added in all directions of RDLs 50 for extensiondistance E1 (FIG. 6A). Extension distance E1 cannot be too large or toosmall. If extension distance E1 is too small, the buffering functionprovided by polymer islands 52 is compromised. If extension distance E1is too large, the areas of polymer islands 52 are too large, and polymerislands 52 themselves may introduce a significant stress to theunderlying passivation layer 44, resulting in passivation layer 44 tohave cracks. In accordance with some embodiments, extension distance E1is equal to or greater than thickness T2 (FIG. 6A) of polymer layer 52to provide adequate buffering, so that the stress applied by UBM 60 isadequately absorbed. In accordance with some embodiments, there is aminimum allowed spacing S1 (FIG. 6B) between neighboring discretepolymer islands 52. The minimum allowed spacing S1 may be equal to orgreater than about 10 nm. If it is found that the spacing (such as S2 inFIG. 6C) between neighboring polymer islands 52 would be smaller thanthe minimum spacing S1, a portion of polymer layer 52 is left to jointhe neighboring polymer islands 52 into a single polymer island, asillustrated in FIG. 6C. Accordingly, in wafer 20, no spacing of twoneighboring polymer islands 52 that are discrete from each other issmaller than the minimum allowed spacing S1, and all neighboring polymerislands 52 with spacings smaller than the minimum allowed spacing S1 areinterconnected by connecting portions of polymer layer 52.

FIG. 7 illustrates the formation of solder regions 62. The respectiveprocess is shown as process 216 in the process flow shown in FIG. 24. Inaccordance with some embodiments of the present disclosure, theformation of solder regions 62 includes placing solder balls on UBM 60,and reflowing the solder balls. In accordance with alternativeembodiments, the formation of solder regions 62 includes plating solderregions using the same plating mask that is used for plating UBM 60, andreflowing the plated solder regions after the plating mask is removedand the metal seed layer is etched.

FIG. 7 also illustrates the singulation (die-saw) of wafer 20, which issingulated along scribe lines 64. The respective process is shown asprocess 218 in the process flow shown in FIG. 24. Chips 22 (which arereferred to as dies 22 or package components 22) are thus separated fromeach other, and the resulting separated chips 22 may be referred to asdies 22 also. Since polymer layer 52 has been patterned, scribe lines 64are free from polymer layer 52. In the singulation process, the scribelines 64 pass through polymer layer 48, and pass through the spacingsbetween polymer islands 52. Accordingly, in the singulation process, theblade used in the singulation may not cut through any part of polymerlayer 52. Also, in the resulting die 22, polymer islands 52 may belaterally spaced apart from the edges of the resulting die 22.

Next, one of dies 22 is bonded to package component 66, which may be aninterposer, a package substrate, a package, a device die, a printedcircuit board, or the like. The respective process is shown as process220 in the process flow shown in FIG. 24. Underfill 70 may be disposedinto the gap between die 22 and package component 66. Underfill 70 maybe in contact with the top surface of polymer layer 48. Furthermore,Underfill 70 may encircle, and contact the sidewalls of, polymer islands52, and separate polymer islands 52 from each other. Package 68 is thusformed.

FIG. 9 illustrates package 68 in accordance with some embodiments. Theseembodiments are similar to the embodiments in FIG. 8, except thatopenings 72 are formed in polymer layer 52, with opening 72 beingdiscrete openings isolated from each other by a continuous polymer layer52. Underfill 70 extends into the openings 72, and will be in contactwith polymer layer 48. The top views of some portions of the respectivedie 22 (and wafer 20) are illustrated in FIGS. 10 through 13, which havedifferent patterns of openings 72. For example, FIG. 10 illustrates thatopenings 72 are strips. FIG. 11 illustrates that openings 72 arecircles. FIG. 12 illustrates that openings 72 may be polygons such assquares, rectangles, hexagons, octagons, or the like. Openings 72 mayalso have mixed patterns. For example, FIG. 13 illustrates that someopenings 72 have polygonal shapes, while other openings 72 have circularshapes, strip shapes, or the like. The locations of openings 72 areselected so that none of RDLs 50 are exposed through any opening 72.

In accordance with some embodiments, in the formation of openings 72,polymer layer 52 is removed from scribe lines 64 (FIG. 7), and scribelines 64 are free from polymer layer 52 therein. In the singulationprocess, the cutting blade cuts through polymer layer 48, and passesthrough the spacings between the remaining portions of polymer layer 52,without cutting into polymer layer 52. The remaining portions of polymerlayer 52 may form an integrated piece (with openings 72 therein) in eachof dies 22, with scribe lines free from polymer layer 52. Alternatively,in scribe lines 64, there are some portions of polymer layer 52 left,and discrete openings 72 are also formed in scribe lines 64.Accordingly, in the die singulation process, polymer layer 52 is alsocut into.

In the embodiments as shown in FIGS. 6B, 6C, and 11 through 13, thetotal area of RDLs 50 in a die 22 is denoted as A (μm²). The total areaof die 22 is denoted as B (μm²). Accordingly, the density C of RDLs 50is B/A, which is represented as a percentage. Since polymer layer 52covers all of RDLs 50 and additional areas, the polymer density D (apercentage) of polymer layer 52, which is the total area of polymerlayer 52 in die 22 divided by the total area of die 22, is greater thanRDL density C. In accordance with some embodiments of the presentdisclosure, polymer density D is greater than RDL density C by adifferent (D-C), which is greater than about 5 percent. Difference (D-C)may be in the range between about 5 percent and about ten percent. If Eis used to represent the density of the area free from polymer layer 52,then E is equal to (100%-D), which may be in the range between about(90%-C) and about (95%-C). Density E is referred to as polymer-openratio E hereinafter. Polymer-open ratio E cannot be too large or toosmall. If polymer-open ratio E is too large, for example, greater thanabout 70 percent, the remaining portions of polymer layer 52 may be toosmall, and cannot provide enough buffering. If polymer-open ratio E istoo small, for example, smaller than about 10 percent, the stressresulted from polymer 52 may cause the underlying passivation layer 44to crack. In accordance with some embodiments, polymer-open ratio E isin the range between about 10 percent and about 70 percent.

FIG. 14 illustrates a portion of die 22 (wafer 20) in accordance withsome embodiments, wherein some details of the profiles of some featuresare shown. In accordance with some embodiments, polymer layer 48 hasthickness T1, which may be smaller than about 12 μm, and may be in therange between about 5 μm and about 12 μm. Thickness T2 of polymer layer52 may be greater than, equal to, or smaller than, thickness T1.

The embodiments of the present disclosure are also applicable to otherpackage components other than wafers and device dies. For example, FIGS.15 through 23 illustrate the cross-sectional views of intermediatestages in the formation of a package including a device die encapsulatedin an encapsulant in accordance with some embodiments of the presentdisclosure. Unless specified otherwise, the materials and the formationmethods of the components in these embodiments are essentially the sameas the like components, which are denoted by like reference numerals inthe embodiments shown in FIGS. 1 through 9. The details regarding theformation processes and the materials of the components shown in FIGS.15 through 23 may thus be found in the discussion of the embodimentsshown in FIGS. 1 through 9.

FIG. 15 illustrates the formation of an initial structure, whichincludes carrier 120, release film 122, dielectric layer 124, RDLs 126,dielectric layer 128, and metal posts 132. Carrier 120 may be a glasscarrier, a ceramic carrier, or the like. Release film 122 may be formedof a polymer-based material (such as a Light-To-Heat-Conversion (LTHC)material). Dielectric layer 124 is formed on release film 122. Inaccordance with some embodiments of the present disclosure, dielectriclayer 124 is formed of a polymer, which may also be a photo-sensitivematerial such as PBO, polyimide, or the like. In accordance withalternative embodiments, dielectric layer 124 is formed of a nitridesuch as silicon nitride, an oxide such as silicon oxide, PSG, BSG, BPSG,or the like. RDLs 126 are formed over dielectric layer 124. Theformation processes and the materials of RDLs 126 may be similar to theprocesses and the materials of RDLs 50 (FIG. 4A).

Further referring to FIG. 15, dielectric layer 128 is formed on RDLs126. The bottom surface of dielectric layer 128 is in contact with thetop surfaces of RDLs 126 and dielectric layer 124. Dielectric layer 128may be formed of a material selected from the same group of candidatematerials for forming dielectric layer 124. Dielectric layer 128 is thenpatterned to form openings (filled by vias 130) therein to expose RDLs126.

Metal posts 132 and vias 130 are formed. Throughout the description,metal posts 132 are alternatively referred to as through-vias 132 sincemetal posts 132 penetrate through the subsequently formed encapsulant.In accordance with some embodiments of the present disclosure,through-vias 132 are formed by plating. The plating of through-vias 132may include forming a blanket seed layer (not shown) over dielectriclayer 128 and extending into the openings in dielectric layer 128,forming and patterning a plating mask (not shown), and platingthrough-vias 132 on the portions of the seed layer that are exposedthrough the openings in the photo resist. The photo resist and theportions of the seed layer that were covered by the photo resist arethen removed. The material of through-vias 132 and vias 130 may includecopper, aluminum, titanium, or the like, or multi-layers thereof.

FIG. 16 illustrates the placement of device die 136. Device die 136 isadhered to dielectric layer 128 through Die-Attach Films (DAF) 137,which may be an adhesive film. DAF 137 may be in contact with the backsurface of the semiconductor substrate 139 in device die 136. Device die136 may be a logic device die including logic transistors therein. Inaccordance with some embodiments, metal pillars 138 (such as copperposts) are pre-formed as the topmost portions of device die 136, whereinmetal pillars 138 are electrically coupled to the integrated circuitdevices such as transistors in device die 136. In accordance with someembodiments of the present disclosure, a polymer fills the gaps betweenneighboring metal pillars 138 to form top dielectric layer 140. The topdielectric layer 140 (which is also referred to as polymer layer 140)may be formed of PBO, polyimide, or the like in accordance with someembodiments.

Next, encapsulant 144 is encapsulated on device die 136. Encapsulant 144fills the gaps between neighboring through-vias 132 and the gaps betweenthrough-vias 132 and device die 136. Encapsulant 144 may include amolding compound, a molding underfill, an epoxy, a resin, or the like.The top surface of encapsulant 144 is higher than the top ends of metalpillars 138.

Further referring to FIG. 16, a planarization process such as a CMPprocess or a mechanical grinding process is performed to thinencapsulant 144, until through-vias 132 and metal pillars 138 areexposed. Due to the grinding, the top ends of through-vias 132 aresubstantially level (coplanar) with the top surfaces of metal pillars138, and are substantially coplanar with the top surface of encapsulant144.

Referring to FIG. 17, dielectric layer 146 is formed. In accordance withsome embodiments of the present disclosure, dielectric layer 146 isformed of a polymer, which may also be a photo-sensitive dielectricmaterial in accordance with some embodiments of the present disclosure.For example, dielectric layer 146 may be formed of PBO, polyimide, orthe like. In accordance with alternative embodiments, dielectric layer146 is formed of an inorganic material such as silicon nitride, siliconoxide, or the like. Dielectric layer 146 is patterned in a photolithography process, so that openings (filled by RDLs 148) are formed.

Next, RDLs 148 are formed to connect to metal pillars 138 andthrough-vias 132. RDLs 148 may also interconnect metal pillars 138 andthrough-vias 132. RDLs 148 include metal traces (metal lines) overdielectric layer 146 as well as vias extending into dielectric layer 146to electrically connect to through-vias 132 and metal pillars 138. Theforming method, the material, and the forming processes of RDLs 148 maybe essentially the same as that of RDLs 50 in FIG. 3, and hence are notrepeated herein.

In subsequent processes as shown in FIGS. 18 through 22, more dielectriclayers and RDLs and the overlying UBMs and solder regions are formed.The formation processes are similar to the processes as shown in FIGS. 3through 7, and thus are not discussed in detail herein. The details maybe found by referring to the discussion referring to FIGS. 3 through 7.FIG. 18 illustrates the formation of polymer layer 48. FIG. 19illustrates the formation of RDLs 50, followed by the formation ofpolymer layer 52 as in FIG. 20. FIG. 21 illustrates the patterning ofpolymer layer 52 to form openings 56 and 58, through which RDLs 50 andpolymer layer 48 are exposed. FIG. 22 illustrates the formation of UBM60 and solder region 62. The resulting reconstructed wafer 63 is thendemounted from carrier 120, and solder regions 74 are formed. Thereconstructed wafer 63 is then sawed along scribe lines 64 to formindividual package components 22. FIG. 23 illustrates the bonding ofpackage component 22 onto package component 66 to form package 68, withunderfill 70 filled between package components 22 and 66.

It is appreciated that the embodiments as discussed referring to FIGS.6B, 6C, and 10 through 14 also apply to the embodiments as shown in FIG.23. Also, the discussions of the areas, ratios, thicknesses, etc. ofpolymer layers 48 and 52, RDLs 50, and UBM 60 also apply to theembodiments in FIG. 23.

In above-illustrated embodiments, some processes and features arediscussed in accordance with some embodiments of the present disclosure.Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution layer or on a substratethat allows the testing of the 3D packaging or 3DIC, the use of probesand/or probe cards, and the like. The verification testing may beperformed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good dies to increase the yield and decreasecosts.

The embodiments of the present disclosure have some advantageousfeatures. By patterning the top polymer layer to form polymer islands orforming openings in the top polymer layer, the stress applied by the toppolymer layer on the underlying dielectric layer is reduced, and thelikelihood of cracking the underlying dielectric layer is reduced.

In accordance with some embodiments of the present disclosure, a methodof forming a semiconductor device comprises forming a plurality of metalpads over a semiconductor substrate of a wafer; forming a passivationlayer covering the plurality of metal pads; patterning the passivationlayer to reveal the plurality of metal pads; forming a first polymerlayer over the passivation layer; forming a plurality of redistributionlines extending into the first polymer layer and the passivation layerto connect to the plurality of metal pads; forming a second polymerlayer over the first polymer layer; and patterning the second polymerlayer to reveal the plurality of redistribution lines, wherein the firstpolymer layer is further revealed through openings in remaining portionsof the second polymer layer. In an embodiment, the second polymer layeris patterned into a plurality of discrete islands spaced apart from eachother, and the first polymer layer is revealed through spacings betweenthe plurality of discrete islands. In an embodiment, in the patterningthe second polymer layer, a plurality of openings are formed in thesecond polymer layer to reveal underneath portions of the first polymerlayer, and edges of each of the openings form full rings. In anembodiment, the first polymer layer and the second polymer layer areformed of a same polymer material, and the patterning the second polymerlayer stops on the first polymer layer. In an embodiment, the firstpolymer layer and the second polymer layer are formed of differentpolymer materials. In an embodiment, the method further comprises bakingthe first polymer layer after the first polymer layer is patterned andbefore the plurality of redistribution lines are formed. In anembodiment, after the second polymer layer is patterned, allredistribution lines in the wafer and at a same level as the pluralityof redistribution lines are covered by the remaining portions of thesecond polymer layer. In an embodiment, the remaining portions of thesecond polymer layer extend laterally beyond edges of respectiveunderlying one of the plurality of redistribution lines. In anembodiment, the plurality of redistribution lines comprise a firstredistribution line and a second redistribution line neighboring eachother and having a first spacing, wherein a first remaining portion ofthe second polymer layer extends from the first redistribution line tothe second redistribution line, and the first remaining portion coversportions of the first redistribution line and the second redistributionline. In an embodiment, the method further comprises forming a thirdredistribution line and a fourth redistribution line neighboring eachother and having a second spacing greater than the first spacing,wherein a second remaining portion and a third remaining portion of thesecond polymer layer cover the third redistribution line and the fourthredistribution line, respectively, and wherein the second remainingportion and the third remaining portion are discrete portions separatedfrom each other. In an embodiment, the method further comprises forminga plurality of Under-Metal Metallurgies (UBMs) extending into theremaining portions of the second polymer layer; bonding a packagecomponent to electrically couple to the plurality of UBMs through solderregions; and dispensing an underfill to contact sidewalls of theremaining portions of the second polymer layer and a top surface of thefirst polymer layer.

In accordance with some embodiments of the present disclosure, a methodof forming a semiconductor device comprises forming a first polymerlayer over an inorganic passivation layer; forming a plurality ofredistribution lines, each comprising a first portion over the firstpolymer layer, and a second portion extending into the first polymerlayer, wherein the plurality of redistribution lines are physicallyseparated from each other; coating a second polymer layer over theplurality of redistribution lines; patterning the second polymer layerinto a plurality of discrete portions separated from each other, witheach of the plurality of discrete portions covering one of the pluralityof redistribution lines; and forming a plurality of Under-BumpMetallurgies (UBMs) extending into the plurality of discrete portions ofthe second polymer layer to contact the plurality of redistributionlines. In an embodiment, the method further comprises sawing through thefirst polymer layer to form a discrete die, wherein scribe lines of thesawing pass through spacings between the discrete portions of the secondpolymer layer. In an embodiment, the discrete portions of the secondpolymer layer cover all redistribution lines that are at a same level asthe plurality of redistribution lines. In an embodiment, the discreteportions of the second polymer layer extend beyond edges of respectiveunderlying ones of the plurality of redistribution lines by a distancesubstantially equal to or greater than a thickness of the second polymerlayer.

In accordance with some embodiments of the present disclosure, asemiconductor structure comprises a first package component comprising adielectric layer; a first polymer layer over the dielectric layer; aplurality of redistribution lines, each comprising a first portion overthe first polymer layer, and a second portion extending into the firstpolymer layer, wherein the plurality of redistribution lines arephysically separated from each other; a patterned second polymer layercomprising a plurality of discrete portions separated from each other,with each of the plurality of discrete portions covering one of theplurality of redistribution lines; and a plurality of Under-BumpMetallurgies (UBMs) extending into the plurality of discrete portions ofthe patterned second polymer layer to contact the plurality ofredistribution lines. In an embodiment, all portions of the patternedsecond polymer layer are spaced apart from edges of the first packagecomponent. In an embodiment, the plurality of redistribution linescomprise a first redistribution line and a second redistribution lineneighboring each other and having a first spacing, wherein a firstremaining portion of the patterned second polymer layer extends from thefirst redistribution line to the second redistribution line, and thefirst remaining portion covers the first redistribution line and thesecond redistribution line. In an embodiment, the structure furthercomprises a third redistribution line and a fourth redistribution lineof the plurality of redistribution lines neighboring each other andhaving a second spacing greater than the first spacing, wherein a secondremaining portion and a third remaining portion of the patterned secondpolymer layer cover the third redistribution line and the fourthredistribution line, respectively, and wherein the second remainingportion and the third remaining portion are discrete portions separatefrom each other. In an embodiment, the structure further comprises asecond package component bonded to the first package component; and anunderfill encircling, and contacting sidewalls of, the plurality ofdiscrete portions of the patterned second polymer layer, wherein theunderfill further contacts a top surface of the first polymer layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A structure comprising: a first package componentcomprising: a dielectric layer; a plurality of redistribution linescomprising first portions over and contacting the dielectric layer; anda plurality of dielectric features, each covering one of the pluralityof redistribution lines, wherein the plurality of dielectric featuresare spaced apart from each other, and wherein each of the plurality ofdielectric features laterally extend beyond edges of correspondingunderlying ones of the plurality of redistribution lines in all lateraldirections parallel to a major surface of the dielectric layer.
 2. Thestructure of claim 1, wherein each of the plurality of dielectricfeatures laterally extends beyond edges of the plurality ofredistribution lines by a distance equal to or greater than a thicknessof the plurality of dielectric features.
 3. The structure of claim 1further comprising: a plurality of Under-Bump Metallurgies (UBMs)extending into the plurality of dielectric features to contact theplurality of redistribution lines; and solder regions on the pluralityof UBMs.
 4. The structure of claim 1, wherein the plurality ofredistribution lines further comprise second portions extending into thedielectric layer.
 5. The structure of claim 1, wherein the dielectriclayer and the plurality of dielectric features comprise polymers.
 6. Thestructure of claim 1, wherein one of the plurality of redistributionlines comprises: a first trace portion; and a first pad portion and asecond pad portion connecting to opposing ends of the first traceportion, wherein the first pad portion and the second pad portion arewider than the first trace portion.
 7. The structure of claim 1, whereinall of the plurality of dielectric features are spaced apart from edgesof the first package component.
 8. The structure of claim 1, whereinspacings between neighboring ones of the plurality of dielectricfeatures are greater than about 10 nm.
 9. The structure of claim 1,wherein: the plurality of redistribution lines comprise a firstredistribution line and a second redistribution line neighboring eachother; and the plurality of dielectric features comprise a firstdielectric feature and a second dielectric feature covering the firstredistribution line and the second redistribution line, respectively,and the structure further comprises an additional dielectric featureconnecting the first dielectric feature to the second dielectricfeature.
 10. The structure of claim 9, wherein each of the firstdielectric feature and the second dielectric feature comprises a firstround part and a second round part, respectively, and the additionaldielectric feature is narrower than, and is joined to, the first roundpart and the second round part.
 11. The structure of claim 1 furthercomprising: a second package component bonded to the first packagecomponent; and an underfill between the first package component and thesecond package component, wherein the underfill encircles, and contactssidewalls of, the plurality of dielectric features, and wherein theunderfill separates the plurality of dielectric features from eachother.
 12. A structure comprising: a first package component comprising:a polymer layer; a plurality of redistribution lines, each comprising afirst portion over the polymer layer, and a second portion extendinginto the polymer layer; a plurality of polymer features, wherein each ofthe plurality of polymer features covers one of the plurality ofredistribution lines; a second package component bonded to the firstpackage component; and an underfill between the first package componentand the second package component, wherein the underfill comprises firstportions extending between the plurality of polymer features to contactthe polymer layer.
 13. The structure of claim 12, wherein the underfillfurther comprises second portions over and contacting top surfaces ofthe plurality of polymer features.
 14. The structure of claim 12 furthercomprising: a plurality of Under-Bump Metallurgies (UBMs) extending intothe plurality of polymer features to contact the plurality ofredistribution lines; and solder regions joining the plurality of UBMsto the second package component.
 15. The structure of claim 12, whereinthe plurality of polymer features extend beyond edges of respectiveunderlying ones of the plurality of redistribution lines by distancesequal to or greater than thicknesses of the plurality of polymerfeatures.
 16. A structure comprising: a polymer layer; a plurality ofredistribution lines comprising first portions over and contacting thepolymer layer, wherein each of the first portions comprises: a first padportion; and a first trace portion connecting to the first pad portion,wherein the first trace portion is narrower than the first pad portion;and a plurality of polymer features covering the plurality ofredistribution lines, wherein each of the plurality of polymer featurescomprises: a second pad portion larger than the first pad portion of arespective underlying one of the plurality of redistribution lines; anda second trace portion connecting to the second pad portion, wherein thesecond trace portion is narrower than the second pad portion, and thesecond trace portion covers the first trace portion, and extends beyondedges of the first trace portion.
 17. The structure of claim 16, whereinthe first pad portion and the second pad portion have circular top-viewshapes.
 18. The structure of claim 16, wherein the second pad portionextends beyond edges of the first pad portion in all lateral directions,and the all lateral directions are parallel to interfaces between thepolymer layer and the plurality of polymer features.
 19. The structureof claim 16, wherein the plurality of polymer features are spaced apartfrom each other.
 20. The structure of claim 19 further comprising anunderfill extending between the plurality of polymer features.